| Summary: | 碩士 === 元培科技大學 === 放射技術研究所 === 100 === Currently, the dosimetric verification for radiotherapy of tumor primarily uses thermoluminescence dosimeter (TLD). Yet with the recent development of metal-oxide-semiconductor field-effect transistor (MOSFET), it is possible to know the radiation dose by measuring the difference in electrical threshold when product is exposed. The technology can provide quick and convenient pre-assessment and post-measurement of exposure dosage. The data obtained are reliable. For thymic carcinoma, the major treatment involves postoperative radiotherapy. The study would use two types of metal-oxide semiconductor field-effect transistors, with model numbers: TN502RD-H and TN502RDM-H, to measure the difference between the scheduled and the actual radiation dose for three different types of treatment of thymic carcinoma as simulated on rando phantom. Treatments include 3D conformal therapy, intensity-modulated radiation therapy, and tomotherapy. The measuring point for radiation dose was set at the tumor target volume and the tumor cross section of the center of right and left lung, which would be regarded as the critical organ, where the scheduled and the actual measured dose after exposure would be compared.
Result showed that the actual measured doses for the three types of treatment in tumor target volume were lower than the scheduled, as they varied by -3.12% to -4.86%, in which all fell within the 5% range. Also, it showed no statistical significance in dosage measurements of the three treatments between the two models of MOSFETs. However, measurements for the right and the left lung (critical organs) showed discrepancy. For 3D-CRT and IMRT, the measured values by the two models of MOSFETs suggested significant variations, while none was observed for the tomotherapy.
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