| Summary: | 碩士 === 元智大學 === 機械工程學系 === 100 === In this paper, we fabricated amorphous silicon thin film solar cells on stainless steel substrate, and investigated the effects of different substrate surface morphologies for original and samples treated by electrical chemical mechanism polish process (ECMP) and electro polishing (EP). We also dicussed the influence of barrier layer to silicon layer by SIMS results. We used the SS304 and SS430 stainless steel with thickness 1.0 mm as substrate for solar cell. We have measured the roughness and surface morphology of the original and the treated samples by surface profiler and optical microscopy, and compared the solar cells performances fabricated of these substrates.
The preliminary results showed the photovoltaic conversion rate of the original SS304 and SS430 stainless steels with Ra roughness value of 0.033 μm and 0.038 μm were 1.7% and 1.6%, respectively. After the ECMP polishing process, the Ra roughness values of the SS304 and SS430 samples were down to 0.022 μm and 0.023 μm, and conversion efficiency increased to 3.7% and 4.0% conversion rate, respectively. The sample treated with EP has surface roughness Ra=0.052 μm and the efficiency 3.2 % were obtained. To improve the short current, we tried to add an AZO layer with 15 nm thickness between silver and silicon layer as buffer layer. The results showed that the buffer layer could help successfully to improve the cell performance, and the best cell conversion efficiency on ECMP treated stainless steel substrates were obtained by SS304 for 4.49 %, SS430 for 4.4 %, and the EP treated sample with 3.84 %.
|
|---|
