| Summary: | 碩士 === 國防大學理工學院 === 機械工程碩士班 === 101 === Because of the rapid development of the microelectronics industry, newly developed technologies such as the Through Silicon Via (TSV) for three-dimensional packaging designs became more and more important. Since the TSV components are extremely small, only micro stress sensors fabricated through MOSFET process are able to measure the stress of the TSV components.
In this thesis, N-type piezoresistive micro stress sensors have been designed, fabricated, and calibrated successfully to measure the stress of the TSV components. Piezoresistive sensor designs are different from the previous ones from the literature, and there are various geometric designs for comparison. Besides, in order to effectively eliminate the related difficulties from minimizing the piezoesistor size, various factors that affect the accuracies on using the piezoesistive sensors were considered and studied in this thesis.
Results from this study can be applied to measure the stress of the TSV components and stress inside the micro-electronic packaging structure.
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