Physical and Electrical Characteristics of High-κ Rare-Earth Oxides for Amorphous-InGaZnO TFT and TFT-Memory Devices
碩士 === 長庚大學 === 電子工程學系 === 101 === In this thesis, we studied the structural properties and electrical characteristics of high-κ Lu2O3 and Lu2TiO5 gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). The high-κ Lu2O3 and Lu2TiO5 IGZO TFT device annealed at 400 °C exhibi...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75073195308653227324 |