Characteristics and Performance Enhancement in HfO2/ZrO2/Ge n-MOSFETs by Laser Annealing and Plasma Treatment

碩士 === 中華大學 === 電機工程學系碩士班 === 101 === The semiconductor industry technology has followed the path of scaling trend based on Moore’s law. But Si MOSFETs is approaching it's fundamental scaling limits, such as increasing the gate oxide leakage and process technology complexity. In the MOSFET, the...

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Bibliographic Details
Main Authors: CHANG,CHIA-FU, 張家富
Other Authors: Wu,Chien-Hung
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/3vwk5q