Investigation on Passivation Processes of Heterojunction Silicon Solar Cell

• Main Authors: Chia-Chi Tsou, 鄒嘉琪
• Other Authors: Shui-Yang Lien
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/30531242558470939368

碩士 === 明道大學 === 材料科學與工程學系碩士班 === 101 === In this study, etching process and passivation effect on n-type heterojunction solar cells are investigated. The tecturing time are varied to fabricate different texturing size and shape. After comparing the influence of all the etching parameters on reflectance and minority carrier lifetime, HF-PECVD system is hired to deposit amorphous silicon doped hydrogen films in different process condition such as process power in the range of 10~25 W, flow of hydrogen in the range of 120~240 sccm, and E/S distance in the range of 10~40 mm. Then we employ QSSPC、FTIR measurement to evaluate lifetime, morphology, and ratio of strong and weak bonds, respectively. Finally, the optimized parameters of substrates and a-Si films are applied to PC1D simulation software to investigate the effect of minority carrier lifetime on efficiency and EQE measurement.