Comparison of the performance of different cleaning methods for lithography masks

碩士 === 國立交通大學 === 工學院永續環境科技學程 === 101 === How to reduce the formation of photo-induced defect has becomes a big challenge in the manufacture of semiconductors. When the critical dimension gets smaller and smaller, the exposure wavelength changed from G-line (436nm) in the early years, then it comes...

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Bibliographic Details
Main Author: 吳珮絹
Other Authors: 蔡春進
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/02570650397933123495