A Study on Effect of Ionizing Radiation on Resistive Random Access Memory
碩士 === 國立交通大學 === 加速器光源科技與應用碩士學位學程 === 101 === In this thesis, the effect of ionizing radiation, including extreme ultra-violete (EUV) irradiation and X-ray irradiation, on the characteristics of Hf-based resistive RAM (RRAM) is investigated. RRAM device with 5-nm-thick HfO2 is used. The effect...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71516556665033253533 |