Stackable transistors and non-volatile memories using high-density plasma gate dielectrics
碩士 === 國立交通大學 === 光電工程研究所 === 101 === In this thesis, low temperature and stackable thin film transistors was presented by using novel fabrication approach. Amorphous silicon(a-Si) films was first deposited at 500℃by inductively coupled plasma chemical vapor deposition system(ICPCVD) as the BOX(buri...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m9jn36 |