Design and modeling of Germanium based Photodetectors for on-chip optical interconnects
碩士 === 國立交通大學 === 電子物理系所 === 101 === As one of the crucial components in optical interconnect system, germanium photodiodes (GePD) are promising due to its corresponding bandgap (0.66 eV) to absorb infra‐red light and the compatibility to silicon‐based photonics and electronics. However, many resear...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38650350368230821493 |