Electrical properties of p-type and n-type ZnO films prepared by sol-gel method
博士 === 國立臺灣大學 === 光電工程學研究所 === 101 === In-N co-doped p-type ZnO thin films have been demonstrated using a non-toxic sol-gel spin coating process. The resistivity of the p-type ZnO films is 4.43 Ω cm at room temperature. The X-ray photoelectron spectra of N 1s core level measured with an Al Kα ph...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85149767973092013457 |