A Study on Photosensitive Characteristics of a-IGZO Thin Film Transistors
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 101 === Wide-band-gap Transparent and amorphous oxide semiconductor are promising functional component for next-generation devices. this dissertation describes the fabrication characterization of amorphous indium gallium zinc oxide transistor (TFT) devices with. In...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ncsd94 |