Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology

碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 102 === Abstract We use TSMC 0.18 μ m CMOS process technology to achieve CMOS RFICs W-band RF front-end design and passive component measurement Barron's. Marchand balun using balanced - unbalanced converter, thereby architecture with output matching netwo...

Full description

Bibliographic Details
Main Authors: FENG-CHENG LIU, 劉峯誠
Other Authors: Yo-Sheng Lin
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/y5ws6n
id ndltd-TW-102NCNU1614004
record_format oai_dc
spelling ndltd-TW-102NCNU16140042019-05-15T21:12:41Z http://ndltd.ncl.edu.tw/handle/y5ws6n Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology 以0.18微米CMOS技術設計及實現之W頻帶巴倫單端至差動轉換器 FENG-CHENG LIU 劉峯誠 碩士 國立暨南國際大學 光電科技碩士學位學程在職專班 102 Abstract We use TSMC 0.18 μ m CMOS process technology to achieve CMOS RFICs W-band RF front-end design and passive component measurement Barron's. Marchand balun using balanced - unbalanced converter, thereby architecture with output matching networks, to increase the coupling circuit to achieve the required amount of phase difference between the use of multi-layered structure of the chip design. Measurement results need not be in amplitude balance must be less than ± 1.5 dB, phase imbalance must be less than ± 10 ∘ all transmission traces were simulated using Sonnet, conducted jointly by the Agilent ADS simulation, be sure to be consistent with the requirements layout simulation. Measurement frequency is 77 ~ 81GHz, and the total chip area of 0.55 mm2 control within. The simulation results meet the design requirements and achieve Marchand balun through Chip Implementation Center (CIC), followed by to perform high-frequency measurements 110GHz element S-parameter measurement system through the National Nano Device Laboratories(NDL), measurements performed with the design simulation design and implementation of practical operation. Yo-Sheng Lin 林佑昇 2014 學位論文 ; thesis 46 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 102 === Abstract We use TSMC 0.18 μ m CMOS process technology to achieve CMOS RFICs W-band RF front-end design and passive component measurement Barron's. Marchand balun using balanced - unbalanced converter, thereby architecture with output matching networks, to increase the coupling circuit to achieve the required amount of phase difference between the use of multi-layered structure of the chip design. Measurement results need not be in amplitude balance must be less than ± 1.5 dB, phase imbalance must be less than ± 10 ∘ all transmission traces were simulated using Sonnet, conducted jointly by the Agilent ADS simulation, be sure to be consistent with the requirements layout simulation. Measurement frequency is 77 ~ 81GHz, and the total chip area of 0.55 mm2 control within. The simulation results meet the design requirements and achieve Marchand balun through Chip Implementation Center (CIC), followed by to perform high-frequency measurements 110GHz element S-parameter measurement system through the National Nano Device Laboratories(NDL), measurements performed with the design simulation design and implementation of practical operation.
author2 Yo-Sheng Lin
author_facet Yo-Sheng Lin
FENG-CHENG LIU
劉峯誠
author FENG-CHENG LIU
劉峯誠
spellingShingle FENG-CHENG LIU
劉峯誠
Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
author_sort FENG-CHENG LIU
title Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
title_short Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
title_full Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
title_fullStr Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
title_full_unstemmed Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
title_sort design and implementation of w-band marchand balun in 0.18 μm cmos technology
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/y5ws6n
work_keys_str_mv AT fengchengliu designandimplementationofwbandmarchandbalunin018mmcmostechnology
AT liúfēngchéng designandimplementationofwbandmarchandbalunin018mmcmostechnology
AT fengchengliu yǐ018wēimǐcmosjìshùshèjìjíshíxiànzhīwpíndàibālúndānduānzhìchàdòngzhuǎnhuànqì
AT liúfēngchéng yǐ018wēimǐcmosjìshùshèjìjíshíxiànzhīwpíndàibālúndānduānzhìchàdòngzhuǎnhuànqì
_version_ 1719110106254147584