Design and Implementation of W-Band Marchand Balun in 0.18 μm CMOS Technology
碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 102 === Abstract We use TSMC 0.18 μ m CMOS process technology to achieve CMOS RFICs W-band RF front-end design and passive component measurement Barron's. Marchand balun using balanced - unbalanced converter, thereby architecture with output matching netwo...
Main Authors: | FENG-CHENG LIU, 劉峯誠 |
---|---|
Other Authors: | Yo-Sheng Lin |
Format: | Others |
Language: | zh-TW |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/y5ws6n |
Similar Items
-
Design of an UWB LNA with an Active Balun in 0.18μm CMOS Process
by: Chen, Zeyan, et al.
Published: (2014) -
0.8V Sub-mW 433MHz-band Transmitter and Receiver in 0.18μm CMOS
by: Chen, Yen-Ting, et al.
Published: (2019) -
Design of Voltage-controlled Oscillator Implemented in 0.18μm CMOS Process
by: Chih Min Yang, et al.
Published: (2011) -
Capacitive Ultrasonic Sensors Implemented in a 0.18 μm CMOS Process
by: Tsai, Chang-Wei, et al.
Published: (2015) -
Study on 0.18μm 2GHz CMOS RF Switch Circuit
by: Chungn-Tai Liu, et al.
Published: (2009)