Study of Extending Carrier Lifetime in ZnTe QD Coupled with ZnCdSe QW Grown by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 102 === In this work, we demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2014
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Online Access: | http://ndltd.ncl.edu.tw/handle/43308019831596730136 |