Simulations of Electrical Characteristics and Energy Transport for High Electron Mobility Transistors

• Main Authors: Lin, Yu-Feng, 林佑峰
• Other Authors: Chieng, Wei-Hua
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/48825646644699913676

碩士 === 國立交通大學 === 機械工程系所 === 102 === Gallium nitride is suitable for application in high-power microwave, because of its high breakdown voltage, high electron mobility and saturation velocity. In this thesis, SILVACO is used to simulate I-V characteristics of AlGaN/GaN High Electron Mobility Transistors (HEMT). The lattice heat flow equation is used to investigate the thermal effect. Least square errors between simulation and experiment results were calculated by using the gradient method to estimate mobility and polarization parameters of AlGaN / GaN HEMT devices developed by the Institute of Materials Engineering of National Chiao Tung University. Simulation results reveal that the current saturates at a maximum value and then decreases with the increase of the drain voltage when lattice thermal effect is considered. This phenomenon is usually attributed to the decrease of the electron mobility with the electric field and the temperature rising. In this thesis, we noticed that the decrease in 2DEG electron concentration with temperature rising is also a reason of the current falling.