| Summary: | 碩士 === 國立中央大學 === 電機工程學系 === 102 === In this work, we develop key steps for the mass production of high-reliability, high-speed (> 25 Gbit/sec), narrow spectral width, and low power consumption 850 nm vertical-cavity surface-emitting laser (VCSEL). There are two main unique fabrication steps of our VCSELs. One is Zn-diffusion and the other is wet-oxidation (relief) for optical and current-confined apertures in our VCSEL structure, respectively. In order to get well-controlled Zn-diffusion profile in the DBR layers of VCSEL to manipulate the number of optical modes inside cavity, a high-quality Si3N4 film has been developed by using different CVD systems and implemented in the device fabrication processes. Regarding with the wet-oxidation process, its major concern is in the uniformity of the aperture size across the whole wafer. A home-made wet-oxidation system has been developed to meet such challenge and a good uniformity (±0.75um) in the fabricated VCSEL wafers with (3.5cm×3.5cm) area has been demonstrated.
By use of the well-developed unique fabrication processes and high-quality 850 nm VCSELs wafers grown on semi-insulating GaAs substrate with short-l (0.5 ) cavity structure and highly strain active layers (15%), record low driving current density (7.92 kA/cm2) and record low energy to data rate ratio (EDR: 224fJ/bit) has been demonstrated for > 41 Gbit/sec operation of 850 nm VCSEL from room-temperature to 85 ℃ operations. This achievement would result in strong impact on the booming market of communication in data center.
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