| Summary: | 碩士 === 國立中央大學 === 機械工程學系 === 102 === Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. By introducing MO source and group V gas into the reactor, then deposits the thin film on the high temperature susceptor. The key components, a gas injection system and the reactor design, play a crucial role in the epitaxial growth rate and uniformity of thin film. In this study, we report a new method to predict the growth rate for Aixtron reactor. The prediction growth rate is in agreement with the previous reported result. In this paper, we also found that the radiation effect has a significant on the growth rate. Finally, we do the parameter analysis to realize the chamber characteristic for Aixtron reactor. Then, we design a new injection system that combines the barrier and purge design to enhance the growth rate and improve the uniformity without wafer spin. Additionally, the new design of MOCVD reactor could be used to epitaxy thin film at atmospheric pressure.
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