Ferromagnetic Silver Gel Preparation for Through-Silicon Via Filling Process

• Main Authors: Chung-Han Lu, 呂忠翰
• Other Authors: Kerwin Wang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/62085467633139504366

碩士 === 國立彰化師範大學 === 機電工程學系 === 102 === This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is deposited on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 1.33×107 V/m. All of the fabrication steps are completed below 100 ˚C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 1.49 Ω.