| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 102 === Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diodes were treated by annealing. The
current–voltage characteristics in the temperature range of -120 oC ~ 30 oC were analyzed on the basis of thermionic emission theory. Through the analysis, it can be suspected that a SiOX layer at the graphene/n-type Si interfaces influences the electronic conduction through the device and
stoichiometry of SiOX is affected by annealing treatment. It is found that both Schottky barrier inhomogeneity and the T0 effect are affected by annealing treatment, implying that stoichiometry of SiOX has a noticeable effect on the inhomogeneous barriers of graphene/n-type Si Schottky
diodes. In addition, some of the n-type Si samples were dipped in the H2O2 solution at 60 oC for 10 min (referred to as H2O2-treated n-type Si samples). The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and
high leakage. However, the graphene/H2O2-treated n-type Si Schottky diode shows a good rectifying behavior with η of 1.9 and low leakage. We believe the inhomogeneous Schottky barrier height has a relation to interface states; and, such result can be attributed to a nonstoichiometric
SiOX layer at the graphene/n-type Si interface.
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