Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer

碩士 === 國立中山大學 === 物理學系研究所 === 102 === We use optical fiber spectrometer to measure the optical modulated reflectance spectroscopy (PR, Photoreflectance). Traditional optical modulation reflectance spectroscopy can be used to measure the size of the bandgap of the semiconductors, built-in electric fi...

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Bibliographic Details
Main Authors: Kai-yuan Hsiao, 蕭凱元
Other Authors: dong-Po Wang
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/67202331448475681813
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Summary:碩士 === 國立中山大學 === 物理學系研究所 === 102 === We use optical fiber spectrometer to measure the optical modulated reflectance spectroscopy (PR, Photoreflectance). Traditional optical modulation reflectance spectroscopy can be used to measure the size of the bandgap of the semiconductors, built-in electric field and transition form, but we need to separate the individual wavelength terms from continuous wavelength for measurements in practice, has the disadvantage need to consume a lot of time. When we use optical fiber spectrometer to the amount of time metering modulation reflectance spectroscopy,we can effectively reduce the time of traditional optical modulation reflectance spectroscopy,because optical fiber spectrometer has the characteristic of observing the strength of multiple wavelength terms simultaneously, This experiment is using optical fiber spectrometer to read the optical modulation reflectance spectroscopy of the gallium arsenide (GaAs), and then transforming the origin spectroscopy by fast Fourier transform (FFT) to find the changed curve of the reflectivity.