The Study of P-i-N Doping Structures in Hybrid White Organic Light-Emitting Diodes

• Main Authors: Wen-hao Tsao, 曹文豪
• Other Authors: Fuh-Shyamg Juang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/6hqs4z

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 102 === In this thesis, the study of P-i-N type dopants to white hybrid fluorescent and phosphorescent OLED, P-type doping of the thesis is focused on enhancing devices. First, Hole-only devices and Electron-only devices compare different doping materials(MoO3、Liq) for enhancing the OLED devices is the main research. Be produced in the same structure and the same thickness. Compare with different doping concentrations and the I-V promotion for OLED devices. Optimize the use of the Hole-only devices and Electron-only devices for fabrication of organic light-emitting diodes. Then use the high heat host of bipolar fluorescent material UBH-15 with blue fluorescent dopant material EB-502 as a blue emitting layer, and bipolar phosphorescent host material EPH-31 with yellow phosphorescent dopant material EPY-01 as a yellow emitting layer to produce white hybrid fluorescent and phosphorescent OLED. And joined Liq in ETL as N-type doping, discussion the effect of N-type dopants to OLED devices for improvement. Then adjust the optimum thickness of the phosphorescent yellow emitting layer, and increase balance of the carrier recombination. When EPH-31:EPY-01 concentration of 3%, can have more electron-hole pairs combined, at 20 mA/cm2 achieve the luminous efficiency of up to 18 cd/A, and the luminous of up to 3600 cd/m2. The N-type device structure as a basic device, and added the P-type dopant material MoO3 to increase the hole injection in effect of the N-type hybrid OLED devices. And discuss the pin-type doping devices for enhancing the situation and analysis at 20 mA/cm2 achieve the luminous efficiency of up to 18.6 cd/A, and the luminous of up to 3720 cd/m2. Then a red phosphorescent dopant material Hex-Ir(phq)3 fabricated for pin devices, and adjust the optimum concentration of 3% at CIE coordinates (0.38,0.39) to form a warm white light OLEDs. Discussed in the last section of the P-type doped region is increased, At the 20 mA/cm2, the operating voltage can be reduced from 8.9V to 7.9V, further increases the amount of current injection.