Characteristics of metal/insulator/Si Structures of Gate dielectric for Capping Layer with ZrN
碩士 === 亞洲大學 === 光電與通訊學系 === 102 === In this study, the use of experiment planning in the silicon substrate by sputtering (co-sputtering) deposition of 7 nm insulating layer of hafnium and zirconium oxide (HfZrO4), then by sputtering and high-power magnetron sputtering (HIPIMS) deposition a layer of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14695466644617192667 |