Improving Linearity for Double-Channel AlGaN/GaN HEMTs
碩士 === 國立雲林科技大學 === 電子工程系 === 102 === AlGaN/GaN high electron mobility transistors (HEMTs) have attracted great interest for wireless communications because of the excellent characteristics of GaN material such as high electron mobility, high thermal conductivity, high breakdown voltage, and cut-off...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69285775330333149689 |