Reliability Enhancement of GaN-based HEMTs for Radar Crucial Devices
博士 === 國防大學理工學院 === 國防科學研究所 === 103 === For both military and civilian technology, the excellent features of aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) crucial in radar, satellite, telecommunications and other high-frequency, high-power application, t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/11998372278843478437 |