Polarization effect on optoelectronic properties of flexible gallium indium nitride light-emitting diodes
碩士 === 國立中興大學 === 精密工程學系所 === 103 === Flexible InGaN-based green light-emitting diodes (LEDs) were fabricated using laser lift-off (LLO) and twice epilayer transferring techniques. However, the piezoelectric polarization field induced by the lattice mismatch between the InGaN and GaN layers, which o...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/25630656762472266569 |