Ultraviolet polarization emission from individual horizontal n-ZnO MR/p-GaN LED with whispering-gallery-mode oscillation
碩士 === 國立成功大學 === 光電科學與工程學系 === 103 === Zinc oxide has wide direct band gap (3.37eV) and large exciton binding energy (60 meV) and also a similar crystallography with GaN which makes it a promising material for light emitting diode (LED) and laser diode (LD). ZnO microrod has well hexagonal shape...
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95581718303314259225 |