Treatment of N-face GaN Substrate by Ammonia Thermal Anneal
碩士 === 國立交通大學 === 電子物理系所 === 103 === In this thesis, we study treatment of N-face GaN substrate by ammonia thermal anneal. There are two ways of anneal respectively in rapid thermal anneal (RTA) and hydride vapor phase epitaxy (HVPE). It is notable that RTA process needs to be carried out under v...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64770291341115229164 |