High Power AlGaN/GaN HEMT Device Fabrication by Stepper
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 103 === The AlGaN/GaN high electron mobility transistors have many superior electronic characteristics such as high operation frequency, low switching loss, and low on-resistance. For this reason, AlGaN/GaN HEMTs were very suitable for high power device applicat...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17991927981814293434 |