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碩士 === 國立中央大學 === 電機工程學系 === 103 === This study focuses on the fabrication and characterization of AlN/AlGaN/AlN/GaN HEMTs on high-resistivity Si（111）substrate. The thermal oxidation is proposed before gate dielectric deposition to achieve the high quality gate dielectric and lower interface state...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11117312024146350588 |