Electrical Analysis and Physical Mechanisms of Structure–depended Negative Bias Illumination Stress in InGaZnO Thin Film Transistors
碩士 === 國立中山大學 === 物理學系研究所 === 103 === In this study, the electrical analyses and physical mechanisms of structure-depended reliability tests in InGaZnO thin film transistors are investigated. In the first part, the difference of shielded area between IGZO layer and metal gate is discussed. Under the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74151896297787489276 |