Study of Double Stacked Si3N4 (SONNOS) Flash Memory based on Ultra-Thin Body Poly-Si Junctionless FET with Trench Structure
碩士 === 國立清華大學 === 工程與系統科學系 === 103 === In this study, the “Double Stacked Si3N4 Flash Memory Based on Ultra-Thin Body Poly-Si Junctionless FET with trench structure”, the characteristics of transistor were improved by ultra-thin channel, and the double stacked Si3N4 was used to improve the poor rete...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fmdadt |