Fabrication and Characterization of Enhancement-Mode AlGaN/GaN Fin-Shaped Metal-Oxide-Semiconductor High-Electron Mobility Transistors
博士 === 國立臺灣大學 === 光電工程學研究所 === 103 === In this thesis, we present an enhancement-mode AlGaN/GaN fin-shaped metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT), fabricated by combining gate recess process and fin-shape structure, featuring double-layer oxides composed of photo-enh...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85222835178671831200 |