High Linearity Enhancement-Mode Double-Channel AlGaN/GaN HEMTs
碩士 === 國立雲林科技大學 === 電子工程系 === 103 === The GaN material of III-V compounds has the excellent properties of material such as high breakdown voltage, high thermal conductivity, small permittivity and high cut-off frequency. It always has been operated in high power, high temperature and high frequency...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94888739604069885591 |