Analyzing the restructure of ultra-low energy Boron implanted Si(110) with cold temperature by nonlinear optics
碩士 === 國立成功大學 === 物理學系 === 104 === The further scale down in device is the trend of semiconductor fabrication and this result approaches to the need of nanotechnology industry. The most critical problem in the yield of the nano-device fabrication is how to confirm the recover of the ultrathin shallo...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3w2e4r |