| Summary: | 碩士 === 國立成功大學 === 物理學系 === 104 === The further scale down in device is the trend of semiconductor fabrication and this result approaches to the need of nanotechnology industry. The most critical problem in the yield of the nano-device fabrication is how to confirm the recover of the ultrathin shallow junction, especially for the quality and electrical properties. In this work, we present a nonlinear optical method to inspect the degree of recrystallization and activation of these ultrathin implanted Si(110), and compare the effect of cold substrate used in the implanted process. Reflective second harmonic generation (RSHG) has sensitivity on the surface polar structure to inspect the degree of recrystallization and activation by examining the amplitude of 2m symmetrical pattern and constant value in RSHG. UV Raman can observe the amorphous condition of implanted Si(110) via annealing. Rapid thermal annealing (RTA), laser annealing, and related parameters in these annealing treatments were performed in this work to distinguish the situation of dopant diffusion, recrystallization and activation for the implanted Si(110) with different substrate temperature implantation.
The usage of cold substrate provides a cold environment to suppress the energy of bombard B atoms in the surface region. The bombarded surface region would be more amorphous in the case of the cold substrate. The advantage of the usage of cold substrate is to easily activate the implanted region with lower thermal budget. Due to the recrystallization of implanted Si happens from α/c interface. Obvious α/c interface in the case of cold substrate can improve the quality of the recovered implanted Si(110).
Before usage the nonlinear optical way to inspect the quality of ultrathin shallow junction, implantation with ultra-high dose is used to apply on the fabrication of nano-device. It is critical to recover the ultrathin shallow junction with high dose in the post-annealing treatment. Through the non-destroyed nonlinear optical way, more detailed condition of implantation and post-annealing can be controlled and further improve the optima condition of ultrathin shallow junction.
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