Fabrication of GaN/AlGaN Schottky Contact Field-Effect Devices
碩士 === 國立成功大學 === 微電子工程研究所 === 104 === In this thesis, AlGaN/GaN heterostructures, grown by metal organic chemical vapor deposition (MOCVD), are proposed to fabricate field-effect devices including Schottky diode type hydrogen gas sensor and high electron mobility transistor (HEMT). For hydrogen gas...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15348051165295498594 |