Using the di-vacancy hopping model to analyse Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate
博士 === 國立臺灣大學 === 電子工程學研究所 === 104 === We report on the structural properties of ordering InGaP directly deposited on (001) Ge substrate by organometallic vapor phase epitaxy. The Ge substrate is 6° miscut towards (110). Results from transmission electron diffraction indicate the existence of CuPt-B...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27097181933541843228 |