The Effects of KI on the Growth and Characteristic of Non-vacuum Cu(InGa)Se2 Thin Films
碩士 === 國立虎尾科技大學 === 材料科學與工程系材料科學與綠色能源工程碩士班 === 104 === This experiment used non-vacuum processes to prepare KI doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first, Cu, In, Ga and Se elements and KI adjusted the ratio of different powders,...
Main Authors: | Chun-Yen Lin, 林俊彥 |
---|---|
Other Authors: | 楊立中 |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/kurw6q |
Similar Items
-
Si Effects on the Grain Growth of the Non-vacuum Coated Cu(InGa)Se2 Thin Films
by: Wei-Peng Chuang, et al.
Published: (2017) -
The Growth of Na2Se Doped Cu(InGa)Se2 Thin Films byUsing Non-vacuum Processes
by: Yung -Yu Huang, et al.
Published: (2014) -
A Study of Cu(InGa)Se2 Thin Film by Electrodeposition
by: Wun-Jin Yeh, et al.
Published: (2008) -
The Effects of IV Si Element on the Non-vacuum I-III-VI Cu(InGa)Se2 Compound Thin Films
by: LIN, HONG-RU, et al.
Published: (2018) -
Comparison the Different Contents IV Group Si on the Non-vacuum Cu(InGa)Se2 Compound Thin Films
by: XIAO, KAI-REN, et al.
Published: (2019)