Improving breakdown voltage for AlGaN/GaN HEMTs with field-plate and low-conducting layer
碩士 === 國立雲林科技大學 === 電子工程系 === 104 === AlGaN/GaN HEMTs are suitable for operating at high power, high temperature and high frequency circuits because gallium nitride (GaN) has high electron mobility, high thermal conductivity, high breakdown electric field and high frequency cut-off. According to the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/54873191658124600659 |