The case study of IC carrier electroless Ni/Pd/Au process quality improvement

The case study of IC carrier electroless Ni/Pd/Au process quality improvement

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碩士 === 元智大學 === 化學工程與材料科學學系 === 104 === In this study, add KCN dipping treatment and make CN- reacts with Pd ion residue on IC substrate copper line build up by SAP method. Finally we find KCN dipping treatment can effectively improve the issue that electroless Ni/Pd/Au layer depositing on core or p...

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Main Authors: Hsiao-Chien Sung, 宋効謙
Other Authors: Jenn-Chiu Huang
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/52426295216215896345
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spelling ndltd-TW-104YZU050630072017-10-15T04:37:06Z http://ndltd.ncl.edu.tw/handle/52426295216215896345 The case study of IC carrier electroless Ni/Pd/Au process quality improvement IC載板無電鍍鎳鈀金製程品質改善之實務研究 Hsiao-Chien Sung 宋効謙 碩士 元智大學 化學工程與材料科學學系 104 In this study, add KCN dipping treatment and make CN- reacts with Pd ion residue on IC substrate copper line build up by SAP method. Finally we find KCN dipping treatment can effectively improve the issue that electroless Ni/Pd/Au layer depositing on core or prepreg. At the same time, check there is no side effects of KCN dipping treatment on substrate surface characteristics include both morphology and roughness. It promotes the collocation between electroless Ni/(Pd)/Au and SAP build up process of IC substrate manufacturing. In this study, we use DOE (design of experiment) experiment method and find KCN dipping treatment(20g/L-120seconds) is the optimum parameter. Jenn-Chiu Huang 黃振球 2016 學位論文 ; thesis 95 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 元智大學 === 化學工程與材料科學學系 === 104 === In this study, add KCN dipping treatment and make CN- reacts with Pd ion residue on IC substrate copper line build up by SAP method. Finally we find KCN dipping treatment can effectively improve the issue that electroless Ni/Pd/Au layer depositing on core or prepreg. At the same time, check there is no side effects of KCN dipping treatment on substrate surface characteristics include both morphology and roughness. It promotes the collocation between electroless Ni/(Pd)/Au and SAP build up process of IC substrate manufacturing. In this study, we use DOE (design of experiment) experiment method and find KCN dipping treatment(20g/L-120seconds) is the optimum parameter.
author2 Jenn-Chiu Huang
author_facet Jenn-Chiu Huang
Hsiao-Chien Sung
宋効謙
author Hsiao-Chien Sung
宋効謙
spellingShingle Hsiao-Chien Sung
宋効謙
The case study of IC carrier electroless Ni/Pd/Au process quality improvement
author_sort Hsiao-Chien Sung
title The case study of IC carrier electroless Ni/Pd/Au process quality improvement
title_short The case study of IC carrier electroless Ni/Pd/Au process quality improvement
title_full The case study of IC carrier electroless Ni/Pd/Au process quality improvement
title_fullStr The case study of IC carrier electroless Ni/Pd/Au process quality improvement
title_full_unstemmed The case study of IC carrier electroless Ni/Pd/Au process quality improvement
title_sort case study of ic carrier electroless ni/pd/au process quality improvement
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/52426295216215896345
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