Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition
碩士 === 國立中正大學 === 光機電整合工程研究所 === 105 === In this study, TiO2 semiconductor thin film were deposited onto glass substrate by drop casting . Then graphene was grown on copper foil by chemical vapor deposition (CVD) and transferred onto TiO2 semiconductor thin film. Finally, Sb2S3 semiconductor thin f...
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ndltd-TW-105CCU006510092019-05-15T23:31:51Z http://ndltd.ncl.edu.tw/handle/2yaevc Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition 以化學浴沉積法改善製備硫化銻於二氧化鈦-石墨烯複合材料 UV/VIS 光偵測器元件製程與光電特性研究 CHEN, HONG-RUI 陳虹瑞 碩士 國立中正大學 光機電整合工程研究所 105 In this study, TiO2 semiconductor thin film were deposited onto glass substrate by drop casting . Then graphene was grown on copper foil by chemical vapor deposition (CVD) and transferred onto TiO2 semiconductor thin film. Finally, Sb2S3 semiconductor thin film were deposited onto graphene by chemical bath deposition (CBD) respectively. The responsivity of graphene on UV light and visible light was increased with this enhancement. The effect of different casted TiO2 layers on the responsivity of the device was studied. The optimized device was defined. The most suitable responsive wavelength and responsivity of the device were measured by full-spectrum technique. The best responsivity and time response of the optimized device were determined by Xenon (Xe) lamp, Light Emitting Diode (LED) and Laser. Irradiated light with 365 nm and 1 μW by Xe lamp showed best responsivity which is 732 A/W, whereas 365 nm and 50 mW of LED light showed shortest rising and falling time which are 0.16 s and 0.59 s respectively. And Irradiated light with 405 nm and 1 μW by Xe lamp showed best responsivity which is 14.33 A/W, 405 nm and 50 mW of LED light showed shortest rising and falling time which are 3 ms and 25 ms respectively. The deposition of TiO2 and Sb2S3 semiconductor on graphene photodetector was proven increasing the responsivity of the device and successfully fabricated Keywords : graphene, Sol-gel method, Chemical bath deposition, TiO2, Sb2S3, Photodetector, Multiple-unit semiconductor device TING, CHU-CHI 丁初稷 2017 學位論文 ; thesis 103 zh-TW |
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碩士 === 國立中正大學 === 光機電整合工程研究所 === 105 === In this study, TiO2 semiconductor thin film were deposited onto glass substrate by drop casting . Then graphene was grown on copper foil by chemical vapor deposition (CVD) and transferred onto TiO2 semiconductor thin film. Finally, Sb2S3 semiconductor thin film were deposited onto graphene by chemical bath deposition (CBD) respectively. The responsivity of graphene on UV light and visible light was increased with this enhancement. The effect of different casted TiO2 layers on the responsivity of the device was studied. The optimized device was defined. The most suitable responsive wavelength and responsivity of the device were measured by full-spectrum technique. The best responsivity and time response of the optimized device were determined by Xenon (Xe) lamp, Light Emitting Diode (LED) and Laser. Irradiated light with 365 nm and 1 μW by Xe lamp showed best responsivity which is 732 A/W, whereas 365 nm and 50 mW of LED light showed shortest rising and falling time which are 0.16 s and 0.59 s respectively. And Irradiated light with 405 nm and 1 μW by Xe lamp showed best responsivity which is 14.33 A/W, 405 nm and 50 mW of LED light showed shortest rising and falling time which are 3 ms and 25 ms respectively. The deposition of TiO2 and Sb2S3 semiconductor on graphene photodetector was proven increasing the responsivity of the device and successfully fabricated
Keywords : graphene, Sol-gel method, Chemical bath deposition, TiO2,
Sb2S3, Photodetector, Multiple-unit semiconductor device
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author2 |
TING, CHU-CHI |
author_facet |
TING, CHU-CHI CHEN, HONG-RUI 陳虹瑞 |
author |
CHEN, HONG-RUI 陳虹瑞 |
spellingShingle |
CHEN, HONG-RUI 陳虹瑞 Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition |
author_sort |
CHEN, HONG-RUI |
title |
Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition |
title_short |
Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition |
title_full |
Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition |
title_fullStr |
Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition |
title_full_unstemmed |
Improved Fabrication Process for UV/VIS Photodetector and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite Material by Chemical Bath Deposition |
title_sort |
improved fabrication process for uv/vis photodetector and photo characteristics study of deposited sb2s3 on tio2-graphene composite material by chemical bath deposition |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/2yaevc |
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