Study of Multilayer TiNi Alloys as Gate Material for InGaAs NMOS Devices
碩士 === 國立交通大學 === 材料科學與工程學系所 === 105 === For a recent year, the scaling down devices has been launched by new architecture or new materials. High efficiency and low power consumption are significantly important for electronics devices based on a new trend of electronic developments. Metal-Oxide-Semi...
Main Authors: | Tran, Duc Hoang, 陳德皇 |
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Other Authors: | Chang, Edward Yi |
Format: | Others |
Language: | en_US |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/7ytjsy |
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