Investigation of Exposure Compensation of Photolithography Processes in Semiconductor Manufacturing

• Main Authors: Xu,Bao-Yun, 許寶勻
• Other Authors: Shu-Kai S. Fan
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/86bzr2

碩士 === 國立臺北科技大學 === 工業工程與管理系碩士班 === 105 === Since semiconductor processes contain abundant complicated processing steps, the high-mixed production mode is one of the characteristics in the semiconductor industry. Hence, in the common practice, how to make the process stable and yield improved is a very important issue. Amount of exposure dose serves an important basis in detecting process abnormalities in semiconductor manufacturing. If the amount of exposure dose is set way off the target, the lithography result of the wafer pattern will be greatly deviated from specification. By measuring the critical dimension, these abnormal wafer patterns can be detected, and provide the process engineer essential information to help identify possible causes, such as machine misadjustment, irregular steps and so on. Nonetheless, in the high mixed-production mode, a single machine usually needs to process a wide variety of products, or the same product can be produced by a multiple of machines. Therefore, how to make an adequate amount of exposure does to produce consistent products and reduce non-conformities warrants an academic research. In this thesis, the amounts of exposure dose to be applied on different machines will be investigated and predicted. New methods for predicting a more accurate exposure compensation are proposed. The proposed method not only can help the process engineer quickly determine the amount of exposure does instead of the existing calculation, but also make the calculation of the predicted exposure trustworthy, increase the yield rate, and stability of the photolithography processing steps.