Channel length reduction and source/drain resistance of FinFETs under source/drain extensions
碩士 === 明新科技大學 === 電子工程系碩士班 === 106 === The applications of FinFET device with advanced nano-node process are more and more adopted in the commercial electronic products, especially in high-performance and high-density products. In order to obtain the optimal electrical characteristics and contro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ma7kc6 |