Fabrication of Porous Silicon Diode by electrochemical anodic etching
碩士 === 國立中興大學 === 光電工程研究所 === 106 === In this thesis, the porous silicon was formed by electrochemical etching of P-type (100) wafer in different hydrofluoric electrolyte concentration at the constant current density of 5 mA/cm2 for different etching time. We observed the SEM image reveals that PSi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d6a255 |