First-principles calculations of Silicene on Silicon Dioxide

碩士 === 國立交通大學 === 電子研究所 === 106 === The tremendous advances of modern semiconductor technology has brought forth extraordinarily scaling down of transistors, while in the meantime it is approaching the bottleneck caused by the short-channel effect. One possible solution in overcoming this is to incr...

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Bibliographic Details
Main Authors: Fang, Yen-chieh, 方彥傑
Other Authors: Lin, Chiung-Yuan
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/r9dncf