Power Electronics Devices Thermal Resistance Measurement Method Improvement and Repeatability Analysis
碩士 === 國立交通大學 === 機械工程系所 === 106 === The high power dissipation and poor thermal conductivity for AlGaN/GaN HEMT power device can result in a serious self-heating effect on the topside surface due to lateral topologies, which will need a well thermal management. This paper proposes a simple, non-inv...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gfy92q |