Fabrication and Measurement of Lateral InAs Nanowire MOSFETs
碩士 === 國立臺灣大學 === 光電工程學研究所 === 106 === In this thesis, we have fabricated the lateral InAs nanowire metal-oxide-semiconductor field-effect transistors. The nanowires are grown by molecular beam epitaxy. We use electron beam lithography to define gate length in hundreds of nanometers, and use atomic...
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| Format: | Others |
| Language: | zh-TW |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/stfkgp |