Control of electrical properties of AlN/GaN heterostructure by varying interfacial treatment
碩士 === 國立交通大學 === 電子物理系所 === 107 === GaN, AlN epilayers and AlN/GaN heterostructure were grown by plasma-assisted molecular beam epitaxy(PA-MBE) with situ reflection high-energy electron diffraction (RHEED) to monitor the surface morphology. The surface morphology after the growth was by scanning el...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9y2yk3 |